AO4312
36V N-Channel MOSFET
General Description
The AO4312 uses trench MOSFET technology that is uniquely optimized to ...
AO4312
36V N-Channel MOSFET
General Description
The AO4312 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "
Schottky style" soft recovery body diode.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
100% UIS Tested 100% Rg Tested
36V 23A < 4.5mΩ < 6.2mΩ
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C Power Dissipation B TA=70°C
VGS
ID
IDM IAS, IAR EAS, EAR
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 36 ±20 23 18 264 45 101 4.2 2.7
-55 to 150
S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 25 50 12
Max 30 60 15
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
Rev 0: December 2010
www.aosmd.com
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AO4312
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
36
V
IDSS Zero Gate Voltage Drai...