AO4302

AO4302 30V N-Channel MOSFET General Description 30 36 Product Summary The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 23A < 4mΩ < 5mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG D G S Maximum 30 ±20 23 18 316 49 120 3.6 2.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 27 52 11 Max 35 65 15 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: February 2011 www.aosmd.com Page 1 of 6 AO4302 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On st...