N-Channel MOSFET
AO4302
30V N-Channel MOSFET
General Description
30 36 Product Summary
The AO4302 combines advanced trench MOSFET tech...
Description
AO4302
30V N-Channel MOSFET
General Description
30 36 Product Summary
The AO4302 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
ESD Protected 100% UIS Tested 100% Rg Tested
30V 23A < 4mΩ < 5mΩ
Top View
D D D D
SOIC-8 Bottom View
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C Power Dissipation B TA=70°C
Junction and Storage Temperature Range
VDS VGS
ID
IDM IAS, IAR EAS, EAR
PD
TJ, TSTG
D
G
S
Maximum 30 ±20 23 18 316 49 120 3.6 2.3
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 27 52 11
Max 35 65 15
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
Rev 0: February 2011
www.aosmd.com
Page 1 of 6
AO4302
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Gate-Body leakage current Gate Threshold Voltage On st...
Similar Datasheet