N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 1/8
N-Chann...
Description
CYStech Electronics Corp.
Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 1/8
N-Channel Enhancement Mode MOSFET
MTEH0N20L3
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package
BVDSS ID RDSON@VGS=10V, ID=0.5A RDSON@VGS=5V, ID=0.1A
200V 1A 0.98Ω (typ) 0.97Ω (typ)
Symbol
MTEH0N20L3
Outline
SOT-223
G:Gate S:Source D:Drain
D
S D G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
*1
Single Pulse Avalanche Energy @ L=10mH, ID=1A ,
VDD=50V
Total Power Dissipation
TA=25℃ *2 TA=70℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by safe operating area
*2. Surface mounted on a 1 in2 pad of 2 oz. copper, t≤10s.
Symbol
VDS VGS ID ID IDM
EAS
PD
Tj, Tstg
MTEH0N20L3
Limits
200 ±30
1 0.8 4
5
2.5 1.6 -55~+150
Unit
V V A A A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 2/8
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
25
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 (Note)
Note : Surface mounted on a 1 in2 pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Unit °C/W °C/W
Electrical Characteristics (...
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