MTEF1P15Q8

CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2013.11.07 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTEF1P15Q8 BVDSS ID RDSON@VGS=-10V, ID=-1.6A RDSON@VGS=-6V, ID=-1A -150V -1.6A 650mΩ(typ) 700mΩ(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free package Equivalent Circuit MTEF1P15Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTEF1P15Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEF1P15Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C896Q8 Issued Date : 2013.07.05 Revised Date : 2013.11.07 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1) Power Dissipation (Note 2) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID ID IDM PD Tj ; Tstg Limits -150 ±20 -1.6 -1.3 -6.4 3.1 2 -55~+150 Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Unit V...