Document
SMD Type
Schottky Diodes SB220 ~ SB2200
Diodes
■ Features
● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability
DO-214AC(SMA)
2.126 1.397
2
4.597 3.988
2.896 2.22 1 2.489 2.02
Unit: mm 4.32 4.12
5.668 4.925
2.438 1.981
2.75 2.55 5.87 5.67
Recommended Land Pattern
1.524 0.762
0.203 0.051
0.305 0.152
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
SB 220
SB 230
SB 240
SB 250
SB 260
SB 270
SB 280
SB 290
SB 2100
SB 2150
SB 2200
Unit
Peak Repetitive Peak Reverse Voltage RMS Reverse Voltage DC Blocking Voltage
VRRM 20 30 40 50 60 70 80 90 100 150 200 VR(RMS) 14 21 28 35 42 49 56 63 70 105 140 V
VR 20 30 40 50 60 70 80 90 100 150 200
Average Rectified Current
IFAV
2
A
Peak Forward Surge Current @=8.3ms
IFSM
60
Forward voltage
VF 0.55
0.7
0.85 0.95 V
Reverse voltage leakage current Ta = 25℃ Ta = 100℃
IR
0.5 10
5
0.2 mA
2
Junction capacitance (Note.1)
Cj 220
80 pF
Thermal Resistance Junction to Ambient (Note.2) RθJA
50 ℃/W
Junction Temperature Storage Temperature range
TJ -65 to 125
-65 to 150
Tstg -65 to 150
℃
Note.1: Measured at 1MHz and applied reverse voltage of 4.0V D.C. Note.2: Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
■ Marking
NO. Marking
SB220 SB230 SB240 SB250 SB260 SB270 SB280 SB290 SB2100 SB2150 SB2200 SB220 SB230 SB240 SB250 SB260 SB270 SB280 SB290 SB2100 SB2150 SB2200
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SMD Type
■ Typical Characterisitics
Schottky Diodes SB220 ~ SB2200
Diodes
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
INSTANTANEOUS FORWARD CURRENT,AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
1.6
1.2
Single Phase Half Wave 60Hz
Resistive or
inductive Load
0.8
0.4 SB220-SB260 SB270-SB2200
0 0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
20 10
1
0.1
0.01 0.2
0.4
TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE
SB220-SB240 SB250-SB260 SB270-SB2150 SB2200
0.6 0.8
1.0 1.1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000 SB220-SB240 SB250-SB2200
JUNCTION CAPACITANCE, pF
100
TJ=25 C
10 0.1
1.0 10
REVERSE VOLTAGE,VOLTS
100
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TRANSIENT THERMAL IMPEDANCE, C/W
INSTANTANEOUS REVERSE CURRENT, MILLAMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
60
48
36
24
12 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
0 1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10 TJ=100 C
1 TJ=75 C
0.1
0.01
TJ=25 C
0.001 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1 0.01
0.1 1
10
t,PULSE DURATION,sec.
100
.