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SB250 Dataheets PDF



Part Number SB250
Manufacturers Kexin
Logo Kexin
Description Schottky Diodes
Datasheet SB250 DatasheetSB250 Datasheet (PDF)

SMD Type Schottky Diodes SB220 ~ SB2200 Diodes ■ Features ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability DO-214AC(SMA) 2.126 1.397 2 4.597 3.988 2.896 2.22 1 2.489 2.02 Unit: mm 4.32 4.12 5.668 4.925 2.438 1.981 2.75 2.55 5.87 5.67 Recommended Land Pattern 1.524 0.762 0.203 0.051 0.305 0.152 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol SB 220 SB 230 SB 240 SB 250 SB 260 SB 270 SB 280 S.

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SMD Type Schottky Diodes SB220 ~ SB2200 Diodes ■ Features ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability DO-214AC(SMA) 2.126 1.397 2 4.597 3.988 2.896 2.22 1 2.489 2.02 Unit: mm 4.32 4.12 5.668 4.925 2.438 1.981 2.75 2.55 5.87 5.67 Recommended Land Pattern 1.524 0.762 0.203 0.051 0.305 0.152 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol SB 220 SB 230 SB 240 SB 250 SB 260 SB 270 SB 280 SB 290 SB 2100 SB 2150 SB 2200 Unit Peak Repetitive Peak Reverse Voltage RMS Reverse Voltage DC Blocking Voltage VRRM 20 30 40 50 60 70 80 90 100 150 200 VR(RMS) 14 21 28 35 42 49 56 63 70 105 140 V VR 20 30 40 50 60 70 80 90 100 150 200 Average Rectified Current IFAV 2 A Peak Forward Surge Current @=8.3ms IFSM 60 Forward voltage VF 0.55 0.7 0.85 0.95 V Reverse voltage leakage current Ta = 25℃ Ta = 100℃ IR 0.5 10 5 0.2 mA 2 Junction capacitance (Note.1) Cj 220 80 pF Thermal Resistance Junction to Ambient (Note.2) RθJA 50 ℃/W Junction Temperature Storage Temperature range TJ -65 to 125 -65 to 150 Tstg -65 to 150 ℃ Note.1: Measured at 1MHz and applied reverse voltage of 4.0V D.C. Note.2: Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted ■ Marking NO. Marking SB220 SB230 SB240 SB250 SB260 SB270 SB280 SB290 SB2100 SB2150 SB2200 SB220 SB230 SB240 SB250 SB260 SB270 SB280 SB290 SB2100 SB2150 SB2200 www.kexin.com.cn 1 SMD Type ■ Typical Characterisitics Schottky Diodes SB220 ~ SB2200 Diodes AVERAGE FORWARD RECTIFIED CURRENT, AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 1- FORWARD CURRENT DERATING CURVE 2.0 1.6 1.2 Single Phase Half Wave 60Hz Resistive or inductive Load 0.8 0.4 SB220-SB260 SB270-SB2200 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, C FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 1 0.1 0.01 0.2 0.4 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE SB220-SB240 SB250-SB260 SB270-SB2150 SB2200 0.6 0.8 1.0 1.1 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 5-TYPICAL JUNCTION CAPACITANCE 2000 1000 SB220-SB240 SB250-SB2200 JUNCTION CAPACITANCE, pF 100 TJ=25 C 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 2 www.kexin.com.cn TRANSIENT THERMAL IMPEDANCE, C/W INSTANTANEOUS REVERSE CURRENT, MILLAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 60 48 36 24 12 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4-TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=100 C 1 TJ=75 C 0.1 0.01 TJ=25 C 0.001 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 t,PULSE DURATION,sec. 100 .


SB240 SB250 SB260


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