BCW67

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG BCW68H = DH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain IC = 10 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H IC = 100 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G –VCBO –VCEO –VEBO –IC Ptot hFE hFE hFE hFE hFE BCW 67series 68 series max. 45 60 V max. 32 45 V max. 5V max. 800 mA max 225 mW min. min. min. min. max. min. max. 75 120 180 100 250 160 400 Continental Device India Limited Data Sheet Page 1 of 3 BCW67, A, B, C BCW68, F, G, H BCW67C, 68H IC = 300 mA; VCE = 1 V BCW67A, 68F BCW67B, 68G BCW67C, 68H hFE min. max. hFE min. hFE min. hFE min. 250 630 35 60 100 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCBO Collector–emitter voltage (open base) –VCEO Emitter–base voltage (open collector) –VEBO Collector current (d.c.) –IC Total power dissipation at Tamb = 25°C Ptot Storage temperature Tstg max. max. max. max. max 45 60 32 45 5 800 225 –55 to +1...