Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW66F, BCW66G BCW66H
GENERAL PURPOSE
TRANSISTOR
N–P–N
transistor
Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain
–IC = 100 mA; –VCE = 10 V –IC = 10 mA; VCE = 1 V
–IC = 100 mA; VCE = 1 V
–IC = 500 mA; VCE = 2 V
–VCBO –VCEO –VEBO –IC Ptot hFE
BCW66F 66G
max. 75 75
max. 45 45
max. 5
5
max. 800 800
max 225 225
66H 75 V 45 V 5V 800 mA 225 mW
min. 35 min. 75
min. 100 max. 250
min. 35
50 80 110 180
160 250 400 630
60 100
Continental Device India Limited
Data Sheet
Page 1 of 3
BCW66F, BCW66G BCW66H
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter) Collector–emitter voltage (open base)
–VCBO –VCEO
Emitter–base voltage (open collector)
–VEBO
Collector current (d.c.)
–IC
Total power dissipation at Tamb = 25°C Ptot
Storage temperature
Tstg
BCW max. max. max. max. max
66F 66G 66H 75 75 75 V 45 45 45 V 5 5 5V 800 800 800 mA 225 225 225 mW
–55 to +150 ° C
THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance
from junction to ambient
Rth j–a
556 ...