HIGH SPEED SILICON DIODES
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BA...
Description
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101 BAV102, BAV103
SOD - 80C Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes, Digital Voltmeters and Video Output Stages in Colour Television
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Forward Current t=1 s
t=1 µs
Power Dissipation up to Ta=25ºC
Storage Temperature
Junction Temperature
THERMAL RESISTANCE Junction to Ambient in free air
SYMBOL VR
VRRM IF (AV)
IF IFRM IFSM IFSM
Ptot
Tstg
Tj
BAV100 50 60
Rth (j-a)
BAV101 100 120
BAV102 150 200 250 250 625 1 5
400
- 65 to +175
175
BAV103 200 250
0.375
UNIT V V mA mA mA A A
mW ºC ºC
K/mW
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=100mA IF=200mA
Reverse Breakdown Voltage
*VBR
IR=100µA
BAV100
BAV101
BAV102
BAV103
Reverse Current
IR VR= VR max VR= VR max, Tj=150ºC
Differential Resistance
rdiff IF=10mA
MIN MAX UNIT 1.00 V 1.25 V
60 120 200 250
100 100
Typ 5
V V V V nA µA
Ω
DYNAMIC CHARACTERISTICS
Diode Capacitance Reverse Recovery Time
Cd VR=0V, f=1MHz
5 pF
trr IF=30mA, to IR=30mA RL=100 Ω
50...
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