BAV100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF (LL- 34 ) Polarity: Cathode is indicated by a white band Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes, Digital Voltmeters and Video Output Stages in Colour Television ABSOLUTE MAXIMUM RATINGS DESCRIPTION Continuous Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Forward Current t=1 s t=1 µs Power Dissipation up to Ta=25ºC Storage Temperature Junction Temperature THERMAL RESISTANCE Junction to Ambient in free air SYMBOL VR VRRM IF (AV) IF IFRM IFSM IFSM Ptot Tstg Tj BAV100 50 60 Rth (j-a) BAV101 100 120 BAV102 150 200 250 250 625 1 5 400 - 65 to +175 175 BAV103 200 250 0.375 UNIT V V mA mA mA A A mW ºC ºC K/mW ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage VF IF=100mA IF=200mA Reverse Breakdown Voltage *VBR IR=100µA BAV100 BAV101 BAV102 BAV103 Reverse Current IR VR= VR max VR= VR max, Tj=150ºC Differential Resistance rdiff IF=10mA MIN MAX UNIT 1.00 V 1.25 V 60 120 200 250 100 100 Typ 5 V V V V nA µA Ω DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time Cd VR=0V, f=1MHz 5 pF trr IF=30mA, to IR=30mA RL=100 Ω 50...