BAT54W/AW/CW/SW
Taiwan Semiconductor
200mA, 30V Schottky Barrier Diode
FEATURES
● Fast switching speed ● Low forward v...
BAT54W/AW/CW/SW
Taiwan Semiconductor
200mA, 30V
Schottky Barrier Diode
FEATURES
● Fast switching speed ● Low forward voltage ● Surface mount device type ● Ultra high-speed switching ● Voltage clamping ● Protection circuits ● High temperature soldering guaranteed: 260°C/10s ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER VALUE UNIT
IF VRRM
200
mA
30
V
IFSM
600
mA
TJ MAX
125
°C
Package
SOT-323
APPLICATIONS
● Voltage clamping ● Ultra high-speed switching ● Reverse polarity protection
MECHANICAL DATA
● Case: SOT-323 ● Weight: 5.00mg (approximately)
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Repetitive peak reverse voltage
VRRM
30
Forward current
IF
200
Power dissipation
PD
200
Peak Forward Surge Current (tp = 10ms)
IFSM
600
Repetitive Peak Forward Current
IFRM
300
Junction temperature
TJ
125
Storage temperature
TSTG
-55 to +150
UNIT V mA
mW mA mA °C °C
1
Version: D2102
BAT54W/AW/CW/SW
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-ambient thermal resistance
SYMBOL RӨJA
TYP 625
UNIT °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
IF = 0.1mA
IF = 1.0mA
Forward Voltage
IF = 10mA
VF
IF = 30mA
IF = 100mA
Reverse current
VR = 25V
IR
Junction capacitance Reverse Recovery Time
VR = 1V, f = 1.0MHz
CJ
IF = 10 mA through
IR ...