BAS116

BAS116 Taiwan Semiconductor 200mA, 75V Switching SMD Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter KEY PARAMETERS PARAMETER VALUE UNIT IF 200 mA VRRM 75 V VF at IF=150mA 1.25 V TJ Max. Package Configuration 150 °C SOT-23 Single die MECHANICAL DATA ● Case: SOT-23 ● Molding compound meets UL 94 V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Power dissipation Repetitive peak reverse voltage Mean forward current Non-Repetitive peak forward surge current @ t=1s PD VRRM IO IFSM Thermal resistance (Junction to Ambient)(Note1) RƟJA Junction temperature range TJ Storage temperature range TSTG Note1: Valid provided that electrodes are kept at ambient temperature BAS116 JV 225 75 200 500 330 -55 to +150 -55 to +150 UNIT mW V mA mA °C/W °C °C 1 Version: F2001 BAS116 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 1.0mA, TJ = 25°C Forward voltage IF = 10mA, TJ = 25°C VF IF = 50mA, TJ = 25...