Document
Small Signal Product
NPN Transistor
BC846AW - BC850CW
Taiwan Semiconductor
FEATURES
- Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means
green compound (halogen-free)
SOT-323
MECHANICAL DATA
- Case: SOT-323 small outline plastic package - Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
BC846AW/BW/CW
PD
200 80
BC847AW/BW/CW
50
Collector-Base Voltage
BC848AW/BW/CW BC849AW/BW/CW
VCBO
30 30
BC850AW/BW/CW
50
BC846AW/BW/CW
65
BC847AW/BW/CW
45
Collector-Emitter Voltage
BC848AW/BW/CW
VCEO
30
BC849AW/BW/CW
30
BC850AW/BW/CW
45
BC846AW/BW/CW
6
BC847AW/BW/CW
6
Emitter-Base Voltage
BC848AW/BW/CW
VEBO
5
BC849AW/BW/CW
5
BC850AW/BW/CW
5
Collector Current Peak Collector Current Junction and Storage Temperature Range
IC ICM TJ , TSTG
0.1 0.2 -55 to + 150
UNIT mW
V
V
V A A °C
Document Number: DS_S1502002
Version: B15
Small Signal Product
BC846AW - BC850CW
Taiwan Semiconductor
PARAMETER
Collector-Base Breakdown Voltage
BC846AW/BW/CW
at IC= 10 μA
BC847AW/BW/CW BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector-Emitter Breakdown Voltage
BC846AW/BW/CW
at IC= 10 mA
BC847AW/BW/CW BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Emitter-Base Breakdown Voltage
BC846AW/BW/CW
at IE= 1 μA
BC847AW/BW/CW BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector Cut-off Current at VCB = 30 V Emitter Cut-off Current at VEB= 5 V
DC Current Gain at VCE= 5 V , IC= 2 mA
BC846AW - BC850AW BC846BW - BC850BW BC846CW - BC850CW
Collector-Emitter Saturation Voltage
Transition Frequency Base Emitter Voltage
Collector Output Capacitance
IC= 10mA , IB = 0.5 mA IC= 100mA , IB = 5 mA VCE = 5 V , IC = 10 mA , f = 100 MHz VCE= 5 V , IC = 2 mA VCE= 5 V , IC = 10 mA VCB = 10 V , IE = 0 , f = 1MHz
SYMBOL VCBO
V(BR)CEO
VEBO
ICBO IEBO hFE VCE(sat)
fT VBE Cob
MIN 80 50 30 30 50 65 45 30 30 45 6 6 5 5 5 110 200 420 100 0.58 -
MAX 15
100 220 450 800 0.25 0.60
0.70 0.77 4.50
UNIT
V
V
V
nA nA V MHz V pF
Document Number: DS_S1502002
Version: B15
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig.1 Normalized DC Current Gain 10
VCE = 10 V
1
hFE, Normalized DC Current Gain
VCE, Collector-Emitter Voltage (V)
0.1 0.1
1 10 100 IC, Collector Current (mAdc)
1000
Fig.3 Collector Saturation Region 2.0
IC=200mA 1.6
1.2 IC=100mA IC=50mA IC=20mA IC=10mA
0.8
0.4
0.0 0.01
10
0.1 1 10 IB, Base Current (mA)
Fig.5 Capacitances
100
CIb
C, Caoacitance (pF)
COb
1 0.1
1 10 VR, Reverse Voltage (V)
Document Number: DS_S1502002
100
fT, Current-Gain-Bandwidth Product (MHz)
V, Voltage (V)
ΘVB, Temperature Coefficient (mV/o C)
BC846AW - BC850CW
Taiwan Semiconductor
Fig.2 "Saturation" and "On" Voltages 1.0 0.9 0.8 VBE(sat) @ IC / IB = 10 0.7 0.6 VBE(OFF) @ VCE = 10 V 0.5 0.4 0.3 0.2 VCE(sat) @ IC / IB = 10 0.1 0.0
0.1 1 10
IC, Collector Current (mAdc)
100
Fig.4 Base-Emitter Current (mA) 1
-55oC to +125OC 1.4
1.8
2.2
2.6
3 0.1
1000
1 10 IC, Collector Current (mA)
100
Fig.6 Current-Gain-Bandwidth Product
100
10 0.1
VCE = 10 V
1 10 IC, Collector Current (mAdc)
100
Version: B15
Small Signal Product
BC846AW - BC850CW
Taiwan Semiconductor
hFE, DC Current Gain (Normalized)
Fig.7 DC Collector Current (mA) 10
VCE = 5 V
1
VCE, Collector-Emitter Voltage (V)
0.1 0.1
2.0
1 10 100 IC, Collector Current(mA)
Fig.9 Collector Saturation Region
1000
1.6
IC=200mA 1.2 IC=100mA
IC=50mA IC=20mA IC=10mA 0.8
0.4
0.0 0.01
100
0.1 1 10 IB, Base Current (mA)
Fig.11 Capacitance
100
C, Capacitance (pF)
Clb 10
COb
1 0.1
1 10 VR, Reverse Voltage (V)
Document Number: DS_S1502002
100
V, Voltage (V)
ΘVB, Temperature Coefficient (mV/o C)
fT, Current-Gain-Bandwidth
Fig. 8 "On" Voltage 1
0.8 VBE(sat) @ IC / IB = 10 0.6
VBE(OFF) @ VCE = 10 V
0.4 VCE(sat) @ IC / IB = 10
0.2
0 0.1
1 10 100 IC, Collector Current (mA)
1000
Fig.4 Bae-Emitter Temperature Coefficient -1
-55oC to +125OC -1.4
-1.8
ΘVB for VBE -2.2
-2.6
-3 0.1
1 10 IC, Collector Current (mA)
100
1000
1000
Fig.12 Current-Gain-Bandwidth Product VCE = 5 V
100
10 0.1
1 10 100 IC, Collector Current (mA)
1000
Version: B15
Small Signal Product
ORDER INFORMATION (EXAMPLE)
BC846AW RFG
Green compound code
Packing code Part no.
PACKAGE OUTLINE DIMENSIONS SOT-323
BC846AW - BC850CW
Taiwan Semiconductor
DIM.
A B C D E F
Unit (mm)
Min 1.80
Max 2.20
1.15 1.35
0.15 0.40 1.20 1.40 2.00 2.45 0.80 1.10
Unit (inch)
Min Max 0.071 0.087 0.045 0.053 0.006 0.016 0.047 0.055 0.079 0.096 0.031 0.043
SUGGEST PAD LAYOUT
DIM.
Z X Y C E
Unit (mm)
Typ. 2.80 0.70 0.90 1.90 1.00
Unit (inch)
Typ. 0.1.