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BC850BW Dataheets PDF



Part Number BC850BW
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description NPN Transistor
Datasheet BC850BW DatasheetBC850BW Datasheet (PDF)

Small Signal Product NPN Transistor BC846AW - BC850CW Taiwan Semiconductor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-323 MECHANICAL DATA - Case: SOT-323 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208.

  BC850BW   BC850BW


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Small Signal Product NPN Transistor BC846AW - BC850CW Taiwan Semiconductor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-323 MECHANICAL DATA - Case: SOT-323 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 5 ± 0.5 mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation BC846AW/BW/CW PD 200 80 BC847AW/BW/CW 50 Collector-Base Voltage BC848AW/BW/CW BC849AW/BW/CW VCBO 30 30 BC850AW/BW/CW 50 BC846AW/BW/CW 65 BC847AW/BW/CW 45 Collector-Emitter Voltage BC848AW/BW/CW VCEO 30 BC849AW/BW/CW 30 BC850AW/BW/CW 45 BC846AW/BW/CW 6 BC847AW/BW/CW 6 Emitter-Base Voltage BC848AW/BW/CW VEBO 5 BC849AW/BW/CW 5 BC850AW/BW/CW 5 Collector Current Peak Collector Current Junction and Storage Temperature Range IC ICM TJ , TSTG 0.1 0.2 -55 to + 150 UNIT mW V V V A A °C Document Number: DS_S1502002 Version: B15 Small Signal Product BC846AW - BC850CW Taiwan Semiconductor PARAMETER Collector-Base Breakdown Voltage BC846AW/BW/CW at IC= 10 μA BC847AW/BW/CW BC848AW/BW/CW BC849AW/BW/CW BC850AW/BW/CW Collector-Emitter Breakdown Voltage BC846AW/BW/CW at IC= 10 mA BC847AW/BW/CW BC848AW/BW/CW BC849AW/BW/CW BC850AW/BW/CW Emitter-Base Breakdown Voltage BC846AW/BW/CW at IE= 1 μA BC847AW/BW/CW BC848AW/BW/CW BC849AW/BW/CW BC850AW/BW/CW Collector Cut-off Current at VCB = 30 V Emitter Cut-off Current at VEB= 5 V DC Current Gain at VCE= 5 V , IC= 2 mA BC846AW - BC850AW BC846BW - BC850BW BC846CW - BC850CW Collector-Emitter Saturation Voltage Transition Frequency Base Emitter Voltage Collector Output Capacitance IC= 10mA , IB = 0.5 mA IC= 100mA , IB = 5 mA VCE = 5 V , IC = 10 mA , f = 100 MHz VCE= 5 V , IC = 2 mA VCE= 5 V , IC = 10 mA VCB = 10 V , IE = 0 , f = 1MHz SYMBOL VCBO V(BR)CEO VEBO ICBO IEBO hFE VCE(sat) fT VBE Cob MIN 80 50 30 30 50 65 45 30 30 45 6 6 5 5 5 110 200 420 100 0.58 - MAX 15 100 220 450 800 0.25 0.60 0.70 0.77 4.50 UNIT V V V nA nA V MHz V pF Document Number: DS_S1502002 Version: B15 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig.1 Normalized DC Current Gain 10 VCE = 10 V 1 hFE, Normalized DC Current Gain VCE, Collector-Emitter Voltage (V) 0.1 0.1 1 10 100 IC, Collector Current (mAdc) 1000 Fig.3 Collector Saturation Region 2.0 IC=200mA 1.6 1.2 IC=100mA IC=50mA IC=20mA IC=10mA 0.8 0.4 0.0 0.01 10 0.1 1 10 IB, Base Current (mA) Fig.5 Capacitances 100 CIb C, Caoacitance (pF) COb 1 0.1 1 10 VR, Reverse Voltage (V) Document Number: DS_S1502002 100 fT, Current-Gain-Bandwidth Product (MHz) V, Voltage (V) ΘVB, Temperature Coefficient (mV/o C) BC846AW - BC850CW Taiwan Semiconductor Fig.2 "Saturation" and "On" Voltages 1.0 0.9 0.8 VBE(sat) @ IC / IB = 10 0.7 0.6 VBE(OFF) @ VCE = 10 V 0.5 0.4 0.3 0.2 VCE(sat) @ IC / IB = 10 0.1 0.0 0.1 1 10 IC, Collector Current (mAdc) 100 Fig.4 Base-Emitter Current (mA) 1 -55oC to +125OC 1.4 1.8 2.2 2.6 3 0.1 1000 1 10 IC, Collector Current (mA) 100 Fig.6 Current-Gain-Bandwidth Product 100 10 0.1 VCE = 10 V 1 10 IC, Collector Current (mAdc) 100 Version: B15 Small Signal Product BC846AW - BC850CW Taiwan Semiconductor hFE, DC Current Gain (Normalized) Fig.7 DC Collector Current (mA) 10 VCE = 5 V 1 VCE, Collector-Emitter Voltage (V) 0.1 0.1 2.0 1 10 100 IC, Collector Current(mA) Fig.9 Collector Saturation Region 1000 1.6 IC=200mA 1.2 IC=100mA IC=50mA IC=20mA IC=10mA 0.8 0.4 0.0 0.01 100 0.1 1 10 IB, Base Current (mA) Fig.11 Capacitance 100 C, Capacitance (pF) Clb 10 COb 1 0.1 1 10 VR, Reverse Voltage (V) Document Number: DS_S1502002 100 V, Voltage (V) ΘVB, Temperature Coefficient (mV/o C) fT, Current-Gain-Bandwidth Fig. 8 "On" Voltage 1 0.8 VBE(sat) @ IC / IB = 10 0.6 VBE(OFF) @ VCE = 10 V 0.4 VCE(sat) @ IC / IB = 10 0.2 0 0.1 1 10 100 IC, Collector Current (mA) 1000 Fig.4 Bae-Emitter Temperature Coefficient -1 -55oC to +125OC -1.4 -1.8 ΘVB for VBE -2.2 -2.6 -3 0.1 1 10 IC, Collector Current (mA) 100 1000 1000 Fig.12 Current-Gain-Bandwidth Product VCE = 5 V 100 10 0.1 1 10 100 IC, Collector Current (mA) 1000 Version: B15 Small Signal Product ORDER INFORMATION (EXAMPLE) BC846AW RFG Green compound code Packing code Part no. PACKAGE OUTLINE DIMENSIONS SOT-323 BC846AW - BC850CW Taiwan Semiconductor DIM. A B C D E F Unit (mm) Min 1.80 Max 2.20 1.15 1.35 0.15 0.40 1.20 1.40 2.00 2.45 0.80 1.10 Unit (inch) Min Max 0.071 0.087 0.045 0.053 0.006 0.016 0.047 0.055 0.079 0.096 0.031 0.043 SUGGEST PAD LAYOUT DIM. Z X Y C E Unit (mm) Typ. 2.80 0.70 0.90 1.90 1.00 Unit (inch) Typ. 0.1.


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