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BC849BW

Taiwan Semiconductor

NPN Transistor

Small Signal Product NPN Transistor BC846AW - BC850CW Taiwan Semiconductor FEATURES - Low reverse current, high relia...


Taiwan Semiconductor

BC849BW

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Description
Small Signal Product NPN Transistor BC846AW - BC850CW Taiwan Semiconductor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-323 MECHANICAL DATA - Case: SOT-323 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Weight: 5 ± 0.5 mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation BC846AW/BW/CW PD 200 80 BC847AW/BW/CW 50 Collector-Base Voltage BC848AW/BW/CW BC849AW/BW/CW VCBO 30 30 BC850AW/BW/CW 50 BC846AW/BW/CW 65 BC847AW/BW/CW 45 Collector-Emitter Voltage BC848AW/BW/CW VCEO 30 BC849AW/BW/CW 30 BC850AW/BW/CW 45 BC846AW/BW/CW 6 BC847AW/BW/CW 6 Emitter-Base Voltage BC848AW/BW/CW VEBO 5 BC849AW/BW/CW 5 BC850AW/BW/CW 5 Collector Current Peak Collector Current Junction and Storage Temperature Range IC ICM TJ , TSTG 0.1 0.2 -55 to + 150 UNIT mW V V V A A °C Document Number: DS_S1502002 Version: B15 Small Signal Product BC846AW - BC850CW Taiwan Semiconductor PARAMETER Collector-Base Breakdown Voltage BC846AW/BW/CW at IC= 10 μA BC847AW/BW/CW BC848AW/BW/CW BC849AW/BW/CW BC850AW/BW/CW Collector-Emitter Breakdown V...




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