Document
BC546,BC547,BC548 SERIES
NPN GENERAL PURPOSE TRANSISTOR
VOLTAGE 30V/45V/65V POWER 625 mWatts
FEATURES
• NPN epitaxial silicon, planar design • Collector current IC = 100mA • Complimentary (PNP) device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DATA
• Case: TO-92 • Terminals: Solderable per MIL-STD-202, Method 208 • Approx Weight : 0.02grams • Device Marking :
BC546A=546A BC547A=547A BC548A=548A
BC546B=546B BC547B=547B BC548B=548B
BC547C=547C BC548C=548C
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage Collector Current - Continuous Max Power Dissipation Storage Temperature Junction Temperature
BC546 BC547 BC548
BC546 BC547 BC548
BC546 BC547 BC548
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance, Junction to Ambient
Symbol VC E O
VC B O
VE B O IC
PTOT TSTG
TJ
Value
65 45 30 80 50 30 6.0 6.0 5.0
100
625
-55 to 150
-55 to 150
Symbol RθJA
Value 200
Units V V V
mA mW OC OC
Units OC/W
STAD-DEC.02.2005
PAGE . 1
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)
PA RA ME TE R
Collector - Emitter Breakdown Voltage (IC=1 0 mA , IB=0 )
Collector - Base Breakdown Voltage (IC=1 0 uA , IE=0 )
Emitter - Base Breakdown Voltage (IE=1 0 uA , IC=0 )
S ym b o l
BC546A,B BC547A,B,C BC548A,B,C
V (BR)C E O
BC546A,B BC547A,B,C BC548A,B,C
V (BR)C B O
BC546A,B BC547A,B,C BC548A,B,C
V (BR)E B O
Emitter-Base Cutoff Current (VEB=5V)
IE B O
C o lle cto r-B a se C uto ff C urre nt(V CB=3 0 V,IE=0 )
DC Current Gain (IC=1 0 uA , V CE=5 V )
TJ= 1 5 0 OC
BC546A,B BC547A,B,C BC548A,B,C
(IC=2 .0 mA , V CE=5 V ) Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Voltage
BC546A,B BC547A,B,C BC548A,B,C
(IC=1 0 mA ,IB=0 .5 mA ) (IC=1 0 0 mA ,IB=5 .0 mA )
(IC=1 0 mA ,IB=0 .5 mA ) (IC=1 0 0 mA ,IB=5 .0 mA )
(IC=2 mA ,V CE=0 .5 mA ) (IC=1 0 mA ,V CE=5 .0 mA )
Collector - Base Capacitance
(V CB=1 0 V,IE=0 ,f=1 MHZ)
IC B O
hFE
V CE(SAT) V BE(SAT) V BE(SAT)
C CBO
M IN .
65 45 30
80 50 30
6.0 6.0 5.0
-
-
-
110 200 420
-
-
0.58 -
-
TYP. MA X . Uni ts - -V
- -V
- -V
-
90 150 270
180 290 520
-
0.7 0.9
0.660 -
-
100
15 5.0
-
220 450 800 0.25 0.6
-
0.70 0.77
4.5
nA nA uA
-
V V V pF
LEGAL STATEMENT
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-DEC.02.2005
PAGE . 2
VCE(sat), (mV) hFE Capacitance, C (pF)
BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546A,BC547A,BC548A ONLY
ICB0, Collecto.