Glass Passivated High Efficient Rectifiers
HER101G – HER108G
Taiwan Semiconductor
1A, 50V - 1000V High Efficient Rectifier
FEATURES
● AEC-Q101 qualified availabl...
Description
HER101G – HER108G
Taiwan Semiconductor
1A, 50V - 1000V High Efficient Rectifier
FEATURES
● AEC-Q101 qualified available ● Glass passivated chip junction ● High current capability, Low VF ● High reliability ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application
KEY PARAMETERS
PARAMETER VALUE UNIT
IF
1
A
VRRM
50 - 1000
V
IFSM
30
A
TJ MAX
150
°C
Package
DO-204AL (DO-41)
Configuration
Single die
MECHANICAL DATA
● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.330g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
HER HER HER HER HER HER HER HER SYMBOL 101G 102G 103G 104G 105G 106G 107G 108G UNIT
Marking code on the device
HER HER HER HER HER HER HER HER 101G 102G 103G 104G 105G 106G 107G 108G
Repetitive peak reverse voltage
VRRM
50 100 200 300 400 600 800 1000 V
Reverse voltage, total rms value
VR(RMS)
35 70 140 210 280 420 560 700 V
Forward current
IF
Surge peak forward current,
8.3ms single half sine wave
IFSM
superimposed on rated load
1
A
30
A
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
1
Version: L2104
HER101G – HER108G
Taiw...
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