BC857BS

BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS VOLTAGE 45 Volts POWER 150 mWatts FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram Marking : 57S ABSOLUTE MAXIMUM RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER Total Device Dissipation Per Device FR-5 Board (Note 1)T =25OC A Derate above 25OC Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Note 1: FR-4 board 70 x 60 x 1mm. REV.0.1-MAR.4.2009 Symbol VCEO VCBO VEBO IC Value -45 -50 -5.0 100 Units V V V mA Symbol P D RθJA TJ TSTG Value 300 150 3.0 328 -55 to 150 -55 to 150 Units mW mW/OC O C/W OC OC PAGE . 1 BC857BS ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted) PA RA ME TE R OF F C HA RA C TE RIS TIC S Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cutoff Current ON C HA RA C TE RIS TIC S S ym b o l Te s t C o nd i t i o n V ( B R ) C E O IC = 1 0 m A V ( B R ) C E S IC =1 0 uA , V E B =0 V ( B R ) C B O IC = 1 0 uA V ( B R ) E B O IE = 1 0 uA IC B O VC B =30V, VC B =30V, TA =150O C MIN. TYP. MA X . Uni t -45 - - V -50 - - -50 - - ...