1N4742A

1N4740A – 1M200Z Taiwan Semiconductor 1W, 10V - 200V Zener Diode FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● For general purpose regulation and protection applications KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.300g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power dissipation at TA = 50°C Derate above 50°C(1) 1 Ptot 6.67 Operating junction temperature range TJ -55 to +150 Storage temperature range Note: 1. Mounted on Cu-Pad size 5mm x 5mm TSTG -55 to +150 UNIT W mW/°C °C °C 1 Version: O2104 1N4740A – 1M200Z Taiwan Semiconductor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Device(1) Zener voltage VZ @ IZT Test current Zener Impedance IZT ZZT@IZT ZZK@IZK Leakage current IR@VR Surge curren t IR V mA Ω Ω mA μA V mA Min Nom(2)(3) Max Max 1N4740A 9.50 10 10.50 25.0 7 ...