N-Channel MosFET
Elektronische Bauelemente
SMG2398N
2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Produ...
Description
Elektronische Bauelemente
SMG2398N
2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space.
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
PRODUCT SUMMARY
SMG2398N
VDS(V) 60
RDS(on) (m 194@VGS= 10V 273@VGS= 4.5V
ID(A) 2.2
1.8
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
Max.
3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K
L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C ID @ TA=70°C
PD @ TA=25°C PD @ TA=70°C
Symbol
VDS VGS
ID
IDM IS
PD
Tj, Tstg
Ra...
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