SMG2391P

Elektronische Bauelemente SMG2391P -0.9A , -150V , RDS(ON) 1.2 Ω P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATIONS PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. REF. Millimeter Min. Max. 2.70 3.10 G 0.10 REF. 2.25 3.00 H 0.40 REF. 1.30 1.70 J 0.10 0.20 1.00 1.40 K 0.45 0.55 1.70 TO2.3P0 VILEW0.85 1.15 0.35 0.50 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 Pulsed Drain Current 2 TA=25°C TA=70°C ID IDM Power Dissipation1 TA=25°C TA=70°C Continuous Source Current (Diode Conduction) 1 PD IS Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Junction to Ambient 1 Notes: 1. Surface mounted on 1”x1” FR4 board. 2. Pulse width limited by Max. junction temperature. t<= 10sec Steady State RθJA Ratings -150 ±20 -0.9 -0.8 5 1.3 0.8 1.5 -55~150 100 166 Unit V V A A W A °C °C / W http://www.SeCoSGmbH.com/ 27-Oct-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2391P -0.9A ,...