SMG2390N

Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 150 RDS(on) ( 0.700@VGS= 10V 1.200@VGS= 5.5V ID(A) 1.1 0.8 SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum 150 ±20 1.1 ±10 1.1 1.30 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junct...