SMG2371P

Elektronische Bauelemente SMG2371P -1A, -100V, RDS(ON) 1.2  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low RDS(on) trench technology.  Low thermal impedance.  Fast switching speed. APPLICATIONS  PoE Power Sourcing Equipment  PoE Powered Devices  Telecom DC/DC converters.  White LED boost converters. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Drain-Source Voltage VDS -100 Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range VGS ID IDM IS PD TJ, TSTG ±20 -1 -0.8 -10 -1.6 1.3 0.8 -55 ~ 150 Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Steady-State Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. RθJA 100 166 Unit V V A A A W °C °C/W http://www.SeCoSGmbH.com/ 15-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SMG2371P -1A, ...