P-Channel MosFET
Elektronische Bauelemente
SMG2339P
-3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET
RoHS Compliant Product ...
Description
Elektronische Bauelemente
SMG2339P
-3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 surface mount package saves board space.
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V) -30
RDS(on) ( 0.057@VGS= -4.5V 0.089@VGS= -2.5V
ID(A) -3.6 -2.8
Gate
Drain
REF.
A B C D E F
Millimeter
Min. 2.70 2.25 1.30
Max. 3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K
L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C TA=70°C
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
Power Dissipation A
TA=25°C TA=70°C
Operating Junction and Storage Temperature Range
VDS VGS
ID
IDM IS
PD
TJ, TSTG
THE...
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