SMG2327P

Elektronische Bauelemente SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Miniature SC-59 surface mount package saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15    ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current 1 Pulsed Drain Current 2 TA=25°C TA=70°C Continuous Source Current (Diode Conduction) 1 ID IDM IS Power Dissipation 1 TA=25°C TA=70°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady-State...