SMG2326N

Elektronische Bauelemente SMG2326N 2.2 A, 20 V, RDS(ON) 70 m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Miniature SC-59 surface mount Package saves board space. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J Application DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 1.00 Max. 3.10 3.00 1.70 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15    ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 VDS VGS ID IDM IS 20 ±8 2.2 1.8 8 0.6 Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 1.25 0.8 -55 ~ 150 Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady-State Notes: 1. ...