N-Channel MosFET
Elektronische Bauelemente
SMG2310N
2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A...
Description
Elektronische Bauelemente
SMG2310N
2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low gate charge Fast switch
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
Max.
3.10 3.00 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K
L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C ID @ TA=70°C
PD @ TA=25°C PD @ TA=70°C
VDS VGS
ID
IDM IS
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t ≦ 5 sec Steady State
Notes: 1 2
Surface Mounted on 1” x 1” FR4 Board. Pulse...
Similar Datasheet