N-Channel MosFET
Elektronische Bauelemente
SMG2310A
N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ
sRoHS Compliant Prod...
Description
Elektronische Bauelemente
SMG2310A
N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ
sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SMG2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310A is universally used for all commercial-industrial applications.
FEATURES
Simple Drive Requirement, Small Package Outline Super High Density Cell Design for Extremely Low RDS(ON)
MARKING CODE
3 D
N-Channel Drain
3
SC-59
A
L
3
Top View
CB
12
KE
3
1 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter Min. Max.
0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55
0.85 1.15
2310A
12 GS
1
Gate
2
Source
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-ambient3
Max
SYMBOL
VDS VGS ID @TA=25°C ID @TA=70°C IDM PD @TA=25°C
TJ, TSTG THERMAL DATA
RθJA
RATINGS
60 ±20 5.0 4.0 10 1.38 0.01 -55 ~ +150
90
UNIT
V V A A A W W/°C °C
°C /W
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Le...
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