P-Channel MOSFET
Elektronische Bauelemente
SMG2307PE
-5.2 A, -20 V, RDS(ON) 31 mΩ P-Channel Enhancement MOSFET
RoHS Compliant Product A...
Description
Elektronische Bauelemente
SMG2307PE
-5.2 A, -20 V, RDS(ON) 31 mΩ P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology.
SC-59
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter Min. Max.
0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size 7’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA=25°C TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM IS
Power Dissipation 1
TA=25°C TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t ≦ 10 sec Steady-State
Notes: 1. Surface Mounted on 1” x 1” F...
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