Elektronische Bauelemente
SMG2306A
5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial applications.
FEATURES
z Capable of 2.5V gate drive z Lower on-resistance
PACKAGE DIMENSIONS
A L
B Top View
C
F G
H
E D (Typ.)
Drain
Gate Source
K J
M
REF.
A B C D E F
Millimeter
Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10 0.45 0.55
REF.
G H K J L M
Millimeter
Min. Max. 1.90 REF.
1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current3 ,
[email protected] Drain Current3 ,
[email protected] Pulsed Drain Current1, Power Dissipation
Operating Junction and Storage Temperature Range
VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg
Linear Derating Factor
THERMAL DATA
Parameter Thermal Resistance Junction-ambient3 Max.
Symbol Rthj-a
Ratings 30 ±12 5 4 20 1.38
-55 ~ +150 0.01
Value 90
Unit V V A A A W ℃
W/℃
Unit ℃/W
01-June-2005 Rev. B
Page 1 of 4
Elektronische Bauelemente
SMG2306A
5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol Min.
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient △BVDSS /△Tj
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gfs
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=70℃)
IDSS
30 0.5 -
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
-
Typ. -
0.1 13 -
8.5 1.5 3.2 6 20 20 3 660 90 70
Max. -
1.2 -
±100 1 25 30 35 50 90 15 -
1050 -
Unit Test Conditions
V V/℃
V S nA
VGS=0, ID=250uA Reference to 25℃, ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= ±12V
uA VDS=30V, VGS=0
uA VDS=24V, VGS=0
VGS=10V, ID=5A
mΩ VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A
VGS=1.8V, ID=1.0A
ID=5A nC VDS=16V
VGS=4.5V
VDS=15V
ID=5A ns VGS=10V
RG=3.3Ω
RD=3Ω
VGS=0V pF VDS=25V
f=1.0MHz
SOURCE-DRAIN DIODE
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.2 V IS=1.2A, VGS=0
Reverse Recovery Time2 Reverse Recovery Charge
Trr - 14 - ns IS=5A, VGS=0V Qrr - 7 - nC dI/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
01-June-2005 Rev. B
Page 2 of 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2306A
5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET
01-June-2005 Rev. B
Page 3 of 4
Elektronische Bauelemente
SMG2306A
5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET
01-June-2005 Rev. B
Page 4 of 4
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