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SMG2306A Dataheets PDF



Part Number SMG2306A
Manufacturers SeCoS
Logo SeCoS
Description N-Channel MosFET
Datasheet SMG2306A DatasheetSMG2306A Datasheet (PDF)

Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial applications. FEATURES z Capable of 2.5V gate drive z Lower on-resistance PACKAGE DIMENSIONS A L B T.

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Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial applications. FEATURES z Capable of 2.5V gate drive z Lower on-resistance PACKAGE DIMENSIONS A L B Top View C F G H E D (Typ.) Drain Gate Source K J M REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current3 ,[email protected] Drain Current3 ,[email protected] Pulsed Drain Current1, Power Dissipation Operating Junction and Storage Temperature Range VDS VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Tj, Tstg Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a Ratings 30 ±12 5 4 20 1.38 -55 ~ +150 0.01 Value 90 Unit V V A A A W ℃ W/℃ Unit ℃/W 01-June-2005 Rev. B Page 1 of 4 Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS Parameter Symbol Min. Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient △BVDSS /△Tj Gate Threshold Voltage VGS(th) Forward Transconductance gfs Gate-Source Leakage Current IGSS Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=70℃) IDSS 30 0.5 - - Static Drain-Source On-Resistance RDS(ON) - Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - Typ. - 0.1 13 - 8.5 1.5 3.2 6 20 20 3 660 90 70 Max. - 1.2 - ±100 1 25 30 35 50 90 15 - 1050 - Unit Test Conditions V V/℃ V S nA VGS=0, ID=250uA Reference to 25℃, ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= ±12V uA VDS=30V, VGS=0 uA VDS=24V, VGS=0 VGS=10V, ID=5A mΩ VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A ID=5A nC VDS=16V VGS=4.5V VDS=15V ID=5A ns VGS=10V RG=3.3Ω RD=3Ω VGS=0V pF VDS=25V f=1.0MHz SOURCE-DRAIN DIODE Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0 Reverse Recovery Time2 Reverse Recovery Charge Trr - 14 - ns IS=5A, VGS=0V Qrr - 7 - nC dI/dt=100A/us Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. 01-June-2005 Rev. B Page 2 of 4 Elektronische Bauelemente CHARACTERISTIC CURVE SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. B Page 3 of 4 Elektronische Bauelemente SMG2306A 5 A, 30 V, RDS(ON) 35 mΩ N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. B Page 4 of 4 .


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