SMG2303

Elektronische Bauelemente SMG2303 -1.9A, -30V,RDS(ON) 240m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description A L The SMG2303 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G Marking : 2303 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm S Ratings -30 ±12 -1.9 -1.5 -10 1.38 0.01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 Unit oC /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2303 -1.9A, -30V,RDS(ON) 240m P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Bre...