XP1080-QU

XP1080-QU Power Amplifier 37.0 - 40.0 GHz Features  Linear Power Amplifier  On-Chip Power Detector  Output Power Adjust  25.0 dB Small Signal Gain  +27.0 dBm P1dB Compression Point  +38.0 dBm OIP3  Lead-Free 7 mm 28-lead SMD Package  RoHS* Compliant and 260°C Reflow Compatible Description The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications. Ordering Information Part Number XP1080-QU-0N00 XP1080-QU-0N0T XP1080-QU-EV1 Package bulk quantity tape and reel evaluation module Functional Schematic PDA PDC NC NC VD1 VD2 VD3 Rev. V2 2 16 3 15 4 14 5 13 6 12 7 11 8 10 RF IN 1 9 RF OUT VG1 VG2 VG3 NC NC Vref Vdet Pin Configuration 1 Pin No. Function Pin No. Function 1 RF Input 9 RF Output 2 Gate Bias, Stage 1 10 Drain Bias for Stage 3 3 Gate Bias, Stage 2 11 Drain Bias for Stage 2 4 Gate Bias, Stage 3 12 Drain Bias for Stage 1 5-6 Not Connected 13,14 Not Connected 7 Detector Refe...