High speed switching Silicon P-channel MOSFET
INJ0011AX SERIES
High speed switching Silicon P-channel MOSFET
DESCRIPTION
INJ0011AX is a Silicon P-channel MOSFET. Th...
Description
INJ0011AX SERIES
High speed switching Silicon P-channel MOSFET
DESCRIPTION
INJ0011AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.
FEATURE
・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible.
Vth=-1.0~-2.0V ・Low on Resistance.
RDS(on)=7.0Ω(TYP)@ID=-100mA, VGS=-4.0V RDS(on)=4.8Ω(TYP)@ID=-100mA, VGS=-10V ・High speed switching. ・Small package for easy mounting.
0.5
1.2 0.8 0.4 0.4
OUTLINE DRAWING
INJ0011AT2(PRELIMINARY)
0.2 0.8 0.2
Unit:mm
INJ0011AM1
2.1 0.425 1.25
0.425
0.25 2.0 1.3 0.65 0.65
0.3
① ②③
① ②③
0.9 0.7 0~0.1 0.15
APPLICATION
High speed switching , Analog switching
www.DataSheet4U.com EQUIVALENT CIRCUIT D G S
JEITA, JEDEC:- ISAHAYA:T-USM TERMINAL CONNECTOR
①:GATE ②:SOURCE ③:DRAIN
INJ0011AU1
1.6 0.4 0.8 0.4
①
②③
JEITA:SC-70 JEDEC:- TERMINAL CONNECTOR
①:GATE ②:SOURCE ③:DRAIN
INJ0011AC1
2.5 0.5 1.5 0.5
①
②③
1.6 1.0 0.5 0.5
0.3 2.9 1.90 0.95 0.95
0.4
0.7 0.55 0~0.1 0.15
1.1 0.8 0~0.1 0.16
JEITA:SC-75A JEDEC:-
TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN
JEITA:SC-59 JEDEC:Similar to TO-236
T TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN
ISAHAYA ELECTRONICS CORPORATION
INJ0011AX SERIES
High speed switching Silicon P-channel MOSFET
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VDSS VGSS ID
PD
Tch Tstg
Drain-source voltage
Gate-source voltage
Drain current
Total p...
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