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INJ0001AU1

Isahaya Electronics Corporation

Silicon P-channel MOSFET

INJ0001AX SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION INJ0001AX is a Silicon P-channel MOSFET. Th...


Isahaya Electronics Corporation

INJ0001AU1

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Description
INJ0001AX SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION INJ0001AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-0.6~-1.2V ・Low on Resistance. Ron=7Ω(TYP) ・High speed switching. ・Small package for easy mounting. 1.2 0.8 0.4 0.4 OUTLINE DRAWING INJ0001AT2 0.2 0.8 0.2 Unit:mm INJ0001AM1 2.1 0.425 1.25 0.425 0.25 2.0 1.3 0.65 0.65 0.3 ① ②③ ① ②③ 0.9 0.7 0~0.1 0.15 0.5 APPLICATION high speed switching , Analog switching www.DataSheet4U.coEmQUIVALENT CIRCUIT D G S JEITA, JEDEC:- ISAHAYA:T-USM TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN INJ0001AU1 1.6 0.4 0.8 0.4 ① ②③ JEITA:SC-70 JEDEC:- TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN INJ0001AC1 2.5 0.5 1.5 0.5 ① ②③ 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 0.7 0.55 0~0.1 0.15 1.1 0.8 0~0.1 0.16 JEITA:SC-75A JEDEC:- TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN JEITA:SC-59 JEDEC:Similar to TO-236 T TERMINAL CONNECTOR ①:GATE ②:SOURCE ③:DRAIN ISAHAYA ELECTRONICS CORPORATION INJ0001AX SERIES High speed switching Silicon P-channel MOSFET MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER VDSS VGSS ID PD Tch Tstg Drain-source voltage Gate-source voltage Drain current Total power (Ta=25℃) dissipation Channel temperature Range of Storage temperature ...




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