MMBTH10

MMBTH10 NPN HIGH FREQUENCY TRANSISTOR This device is designed for VHF/UHF amplifier applications and high output VHF oscillators. 3 COLLECTOR SPECIFICATION FEATURES Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz Collector Currents up to 50mA Industry Standard SOT-23 Package APPLICATIONS Low Noise VHF/UHF Amplifiers and Mixers Low Frequency Drift, High Output Oscillators 1 BASE 2 EMITTER 1 2 SOT-23 3 MAXIMUM RATINGS TJ= 25°C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Operating Temperature Range Storage Temperature Range Symbol V CE0 V CB0 V EB0 IC PD TJ Tstg Value 25 30 3.0 50 225 -55 to 150 -55 to 150 Units V V V mA mW °C °C THERMAL CHARACTERISTICS CHARACTERISTIC Thermal Resistance - Junction to Ambient (Note 1) Symbol R th JA Value 556 Units °C/W Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout 4/18/2006 Page 1 www.panjit.com MMBTH10 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted) OFF CHARACTERISTICS Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CE0 V(BR)CB0 V(BR)EB0 I CB0 I EB0 Conditions IC = 1.0 mA, IB = 0 IC = 100 uA, IE = 0 IE = 10 uA, IC = 0 VCB = 25 V, EI = 0 VEB = 2.0 V, CI = 0 Min Typical 25 30 3.0 --- Max - 100 100 ON CHARACTERISTICS Paramet...