N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP03N70I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avala...
Description
Advanced Power Electronics Corp.
AP03N70I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
D
G S
Description
AP03N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS
RDS(ON) ID4
600V 3.6Ω 3.3A
G DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
600 V
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS
Gate-Source Voltage Drain Current, VGS @ 10V4 Drain Current, VGS @ 10V4 Pulsed Drain Current1
Total Power Dissipation Single Pulse Avalanche Energy2
+30 V 3.3 A 2.1 A 10 A 29 W 67 mJ
IAR TSTG TJ
Avalanche Current Storage Temperature Range Operating Junction Temperature Range
3 -55 to 150 -55 to 150
A ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 4.3 65
Units ℃/W ℃/W
1 201501072
AP03N70I-HF
...
Similar Datasheet