N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP02N90JB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanc...
Description
Advanced Power Electronics Corp.
AP02N90JB
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
D
▼ RoHS Compliant & Halogen-Free
G
Description
S
AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
BVDSS RDS(ON) ID
900V 7.2Ω 1.9A
GDS
TO-251S
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
900 V
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS
Gate-Source Voltage
Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy2
+30 V 1.9 A 1.2 A 6A 62.5 W 1.13 W 18 mJ
IAR TSTG TJ
Avalanche Current Storage Temperature Range Operating Junction Temperature Range
1.9 -55 to 150 -55 to 150
A ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value 2
110
Units ℃/W ℃/W
1 201505271
AP02N90JB
Electrical Characteristics@Tj=25oC(unless otherw...
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