AP01L60T-H-HF

Advanced Power Electronics Corp. AP01L60T-H-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free D G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-92 package is widely used for all commercial-industrial applications. BVDSS RDS(ON) ID G D S 700V 13.5Ω 160mA TO-92 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol .Parameter Rating Units VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage +30 V ID@TA=25℃ Drain Current, VGS @ 10V 160 mA ID@TA=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 100 mA 300 mA PD@TA=25℃ Total Power Dissipation 0.83 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 150 Unit ℃/W 1 201501063 AP01L60T-H-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Cur...