Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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V60170G-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-220AB
V60170G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 170 V 210 A 0.72 V 175 °C
TO-220AB
Diode variation
Dual common cat...
