LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
LSI1012XT1G S-LSI1012XT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control...
