Document
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
1 23
I2PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage Maximum average forward rectified current
per device per diode
SYMBOL VRRM IF(AV)
TSI20H 100CW
100
TSI20H
TSI20H
120CW
150CW
120 150
20
10
Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
150
Voltage rate of change (Rated VR)
Instantaneous forward voltage per diode ( Note1 )
IF = 5A IF = 10A IF = 5A IF = 10A
Instantaneous reverse current per diode at rated reverse voltage
TJ = 25°C
TJ = 125°C TJ = 25°C TJ = 125°C
Typical thermal resistance per diode
Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
dV/dt
VF
IR RθJC RθJL TJ TSTG
10000 TYP MAX TYP MAX TYP MAX 0.57 - 0.62 - 0.72 0.67 0.79 0.78 0.87 0.81 0.90 0.50 - 0.53 - 0.58 0.59 0.68 0.63 0.72 0.66 0.75
- 200 - 200 - 100 8 25 8 25 3 15
2.8
3.8 - 55 to +150 - 55 to +150
TSI20H 200CW
200
TYP 0.77 0.83 0.62 0.68
3
MAX -
0.93 -
0.78 100 15
UNIT V A
A V/μs
V
μA mA °C/W °C/W °C °C
Document Number: DS_D1411038
Version: C15
ORDER INFORMATION (EXAMPLE)
TSI20H100CW C0G
Green compound code
Packing code Part no.
AVERAGE FORWARD CURRENT (A)
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE 25
20
15
10 WITH HEATSINK
5 3in x 5in x 0.25in Al-Plate
0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100 TSI20H120CW
10 TJ=150oC
TJ=125oC 1
0.1
TJ=100oC TJ=25oC
0.01 0
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100 TSI20H100CW
10 TJ=150oC
TJ=125oC 1 0.1
TJ=100oC TJ=25oC
0.01 0.0
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1.0
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100 TSI20H150CW
10
1
0.1
0.01 0
TJ=150oC TJ=125oC
TJ=100oC TJ=25oC
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
Document Number: DS_D1411038
Version: C15
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 5 TYPICAL FORWARD CHARACTERISTICS 100
TSI20H200CW
10 TJ=150oC
1 TJ=125oC
0.1
0.01 0
TJ=100oC TJ=25oC
0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
FIG. 7 TYPICAL REVERSE CHARACTERISTICS
100 TTSSTI2300HH112200CCWW
10
1 0.1 0.01
TJ=150oC TJ=125oC TJ=100oC
0.001 0.0001
TJ=25oC
0.00001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
100 TSI20H100CW
10 TJ=150oC
1 TJ=125oC
TJ=100oC 0.1
0.01
0.001 0.0001
TJ=25oC
0.00001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 8 TYPICAL REVERSE CHARACTERISTICS
100 TSI20H150CW
10
1 0.1 0.01
TJ=150oC TJ=125oC TJ=100oC
0.001
0.0001
TJ=25oC
0.00001 10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS REVERSE CURRENT (mA)
FIG. 9 TYPICAL REVERSE CHARACTERISTICS
100 TSI20H200CW
10
1 0.1 0.01
TJ=150oC TJ=125oC TJ=100oC
0.001
0.0001
TJ=25oC
0.00001 10
20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411038
JUNCTION CAPACITANCE (pF)
10000 1000
FIG. 10 TYPICAL JUNCTION CAPACITANCE
TSI20H100CW
f=1.0MHz Vsig=50mVp-p
TSI20H120CW
100
10 0.1
TSI20H200CW
TSI20H150CW
1 10 REVERSE VOLTAGE (V)
100
Version: C15
PACKAGE OUTLINE DIMENSIONS I2PAK
MARKING DIAGRAM
P/N G YWW F
= Marking Code = Green Compound = Date Code = Factory Code
TSI20H150CW - TSI20H200CW
Taiwan Semiconductor
DIM.
A B C D E F G H I J K L
Unit (mm)
Min Max - 10.50
1.14 1.40 2.80 4.20 0.68 0.94 2.41 2.67 9.07 9.47 7.79 9.35 4.40 4.70 1.14 1.40 2.20 2.80 0.35 0.64 0.95 1.45
Unit (inch)
Min Max - 0.413
0.045 0.055 0.110 0.165 0.027 0.037 0.095 0.105 0.357 0.373 0.307 0.368 0.173 0.185 0.045 0.055 0.087 0.110 0.014 0.025 0.037 0.057
Document Number: DS_D141.