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TSI20H100CW Dataheets PDF



Part Number TSI20H100CW
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Trench Schottky Rectifier
Datasheet TSI20H100CW DatasheetTSI20H100CW Datasheet (PDF)

TSI20H100CW - TSI20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifiers FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 1 23 I2PAK TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency m.

  TSI20H100CW   TSI20H100CW


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TSI20H100CW - TSI20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifiers FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 1 23 I2PAK TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: I2PAK Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) TSI20H 100CW 100 TSI20H TSI20H 120CW 150CW 120 150 20 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 Voltage rate of change (Rated VR) Instantaneous forward voltage per diode ( Note1 ) IF = 5A IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width = 300μs, 1% duty cycle dV/dt VF IR RθJC RθJL TJ TSTG 10000 TYP MAX TYP MAX TYP MAX 0.57 - 0.62 - 0.72 0.67 0.79 0.78 0.87 0.81 0.90 0.50 - 0.53 - 0.58 0.59 0.68 0.63 0.72 0.66 0.75 - 200 - 200 - 100 8 25 8 25 3 15 2.8 3.8 - 55 to +150 - 55 to +150 TSI20H 200CW 200 TYP 0.77 0.83 0.62 0.68 3 MAX - 0.93 - 0.78 100 15 UNIT V A A V/μs V μA mA °C/W °C/W °C °C Document Number: DS_D1411038 Version: C15 ORDER INFORMATION (EXAMPLE) TSI20H100CW C0G Green compound code Packing code Part no. AVERAGE FORWARD CURRENT (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) FIG. 1 FORWARD CURRENT DERATING CURVE 25 20 15 10 WITH HEATSINK 5 3in x 5in x 0.25in Al-Plate 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 TSI20H120CW 10 TJ=150oC TJ=125oC 1 0.1 TJ=100oC TJ=25oC 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) TSI20H100CW - TSI20H200CW Taiwan Semiconductor FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TSI20H100CW 10 TJ=150oC TJ=125oC 1 0.1 TJ=100oC TJ=25oC 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1.0 FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 TSI20H150CW 10 1 0.1 0.01 0 TJ=150oC TJ=125oC TJ=100oC TJ=25oC 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 Document Number: DS_D1411038 Version: C15 INSTANTANEOUS FORWARD CURRENT (A) FIG. 5 TYPICAL FORWARD CHARACTERISTICS 100 TSI20H200CW 10 TJ=150oC 1 TJ=125oC 0.1 0.01 0 TJ=100oC TJ=25oC 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 FIG. 7 TYPICAL REVERSE CHARACTERISTICS 100 TTSSTI2300HH112200CCWW 10 1 0.1 0.01 TJ=150oC TJ=125oC TJ=100oC 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) TSI20H100CW - TSI20H200CW Taiwan Semiconductor FIG. 6 TYPICAL REVERSE CHARACTERISTICS 100 TSI20H100CW 10 TJ=150oC 1 TJ=125oC TJ=100oC 0.1 0.01 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 8 TYPICAL REVERSE CHARACTERISTICS 100 TSI20H150CW 10 1 0.1 0.01 TJ=150oC TJ=125oC TJ=100oC 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS REVERSE CURRENT (mA) FIG. 9 TYPICAL REVERSE CHARACTERISTICS 100 TSI20H200CW 10 1 0.1 0.01 TJ=150oC TJ=125oC TJ=100oC 0.001 0.0001 TJ=25oC 0.00001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS_D1411038 JUNCTION CAPACITANCE (pF) 10000 1000 FIG. 10 TYPICAL JUNCTION CAPACITANCE TSI20H100CW f=1.0MHz Vsig=50mVp-p TSI20H120CW 100 10 0.1 TSI20H200CW TSI20H150CW 1 10 REVERSE VOLTAGE (V) 100 Version: C15 PACKAGE OUTLINE DIMENSIONS I2PAK MARKING DIAGRAM P/N G YWW F = Marking Code = Green Compound = Date Code = Factory Code TSI20H150CW - TSI20H200CW Taiwan Semiconductor DIM. A B C D E F G H I J K L Unit (mm) Min Max - 10.50 1.14 1.40 2.80 4.20 0.68 0.94 2.41 2.67 9.07 9.47 7.79 9.35 4.40 4.70 1.14 1.40 2.20 2.80 0.35 0.64 0.95 1.45 Unit (inch) Min Max - 0.413 0.045 0.055 0.110 0.165 0.027 0.037 0.095 0.105 0.357 0.373 0.307 0.368 0.173 0.185 0.045 0.055 0.087 0.110 0.014 0.025 0.037 0.057 Document Number: DS_D141.


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