TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench S...
TSI10H100CW - TSI10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench
Schottky Rectifiers
FEATURES
- Patented Trench
Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench
Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters.
1 2 3
I2PAK
MECHANICAL DATA
Case: I2PAK Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
per device per diode
SYMBOL VRRM IF(AV)
TSI10H 100CW
100
TSI10H
TSI10H
120CW
150CW
120 150
10
5
TSI10H 200CW
200
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode
IFSM
100
Voltage rate of change (Rated VR)
dV/dt
Instantaneous forward voltage per diode (Note1)
IF = 5A IF = 5A
Instantaneous reverse current per diode at rated reverse voltage
Typical thermal resistance pe...