RoHS BF620
BF620 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Col...
RoHS BF620
BF620
TRANSISTOR (
NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
50 mA
OV(BR)CBO:
300 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain
Collector-emitter saturation voltage
ETransition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) VCE(sat)
fT
Test conditions
Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=5V, IC=0 VCE=20V, IC=25mA IC=30mA, IB=5mA VCE=10V, IC=100mA, f=100MHz
MIN TYP MAX UNIT
300 V 300 V
5V 10 nA 50 nA
50 0.6 V
60 MHz
WEJ ELMarking
DC
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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