BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES High current Low voltage Medium power g...
BCX54/BCX55/BCX56
NPN Plastic-Encapsulate
Transistor
P b Lead(Pb)-Free
FEATURES High current Low voltage Medium power general purposes Driver stages of audio amplifiers.
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD BCX55:BE BCX55-10:BG BCX52-16:BM BCX56:BH BCX56-10:BK BCX56-16:BL
1. BASE 2. COLLECTOR
3. EMITTER
1 2 3
SOT-89
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
BCX54
BCX55
BCX56
VCEO
Collector-Emitter Voltage
VEBO IC PC TJ Tstg
Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
BCX54 BCX55 BCX56
Value 45 60 100
45 60 80 5 1 500 150 -65-150
Units
V
V
V A mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Symbol V(BR)CBO
Test conditions IC=100μA,IE=0
V(BR)CEO
IC=1mA,IB=0
V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3)
IE=100μA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=5mA VCE=2V,IC=150mA VCE=2V,IC=500mA
BCX54 BCX55
BC56 BCX54 BCX55 BCX56
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
Base-emitter voltage Transition frequency
VBE VCE=2V,IC=500mA fT VCE=5V,IC=10mA,f=100MHz
MIN 45 60 100 45 60 80 5
40 63 25
TYP 130
MAX UNIT
V
V
V 0.1 μA 0.1 μA
250
0.5 V 1V
MHz
WEITRON
http://www.weitron.com.tw
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25-Jun-08
BCX54/BCX55/BCX5...