ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected.
Features
VDS (V)=20V ID=6.5A (VGS=4.5V) RDS(ON)<21mΩ (VGS=4.5V) RDS(ON)<25m...
