N-Channel MOSFET
HFD8N70U_HFU8N70U
HFD8N70U / HFU8N70U
700V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
Description
HFD8N70U_HFU8N70U
HFD8N70U / HFU8N70U
700V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.3 ȍ7\S #9GS=10V 100% Avalanche Tested
June 2015
BVDSS = 700 V RDS(on) typ = 1.3 ȍ ID = 6.0 A
D-PAK I-PAK
2
1 3
HFD8N70U
1
2 3
HFU8N70U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700 6.0 3.8 24 ρ30 280 6.0 9.8 4.5
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25) - Derate above 25
2.5 98 0.78
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.28 50 110
Units V A A A V mJ A mJ
V/ns W W
W/
Units
/W
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