HFU8N70U

HFD8N70U_HFU8N70U HFD8N70U / HFU8N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.3 ȍ7\S #9GS=10V ‰ 100% Avalanche Tested June 2015 BVDSS = 700 V RDS(on) typ = 1.3 ȍ ID = 6.0 A D-PAK I-PAK 2 1 3 HFD8N70U 1 2 3 HFU8N70U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 6.0 3.8 24 ρ30 280 6.0 9.8 4.5 Power Dissipation (TA = 25୅)* PD Power Dissipation (TC = 25୅) - Derate above 25୅ 2.5 98 0.78 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 1.28 50 110 Units V A A A V mJ A mJ V/ns W W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ...