Document
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILIICON PLANAR VOLTAGE REGULATOR DIODE
3
2 1
3
Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE
12
BZX84C2V4 to 75V
SOT-23 Formed SMD Package
Low voltage general purpose voltage regulator diode
ABSOLUTE MAXIMUM RATINGS (Ta=25°C) DESCRIPTION Working Voltage Tolerance Repetitive Peak Forward Current Repetitive Peak Working Current Power Dissipation upto Ta=25ºC Power Dissipation upto Tc=25ºC Junction Temperature Storage Temperature
THERMAL RESISTANCE Junction to Ambient
* Device mounted on a ceramic alumna ** Device mounted on an FR5 printed circuit board
SYMBOL
IFRM IZRM *PD **PD Tj Tstg
*Rth (j-a)
Forward Voltage at VF <0.9V at 10mA and <1.5V at 200mA
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
Device
Working
Differential Temperature
Differential
Voltage ***VZ ( + 5%)
Resistance rdiff (Ω)
Coefficient SZ (mV/K)
Resistance rdiff (Ω)
(V) at IZ test=5mA
min max
at IZ test=5mA at IZ test=5mA
max
min max
at IZ test=1mA max
BZX84C2V4
2.20 2.60
100
-3.5
600
BZX84C2V7
2.50 2.90
100
-3.5
600
BZX84C3V0
2.80 3.20
95
-3.5
600
BZX84C3V3
3.10 3.50
95
-3.5
600
BZX84C3V6
3.40 3.80
90
-3.5
600
BZX84C3V9
3.70 4.10
90
-3.5
600
BZX84C4V3
4.00 4.60
90
-3.5
600
BZX84C4V7
4.40 5.00
80
-3.5 0.2
500
BZX84C5V1
4.80 5.40
60
-2.7 1.2
480
BZX84C5V6
5.20 6.00
40
-2.0 2.5
400
BZX84C6V2
5.80 6.60
10
0.4 3.7
150
BZX84C6V8
6.40 7.20
15
1.2 4.5
80
BZX84C7V5
7.00 7.90
15
2.5 5.3
80
BZX84C8V2
7.70 8.70
15
3.2 6.2
80
BZX84C9V1
8.50 9.60
15
3.8 7.0
100
BZX84C10
9.40 10.60
20
4.5 8.0
150
BZX84C2V4_75V Rev_060506E
*** Pulse Test 20ms < tp < 50ms
VALUE +5
250 250 300 250 150 - 65 to +150
420
IR at VR
µA
Max (V) 50 1.0 20 1.0 10 1.0 5.0 1.0 5.0 1.0 3.0 1.0 3.0 1.0 3.0 2.0 2.0 2.0 1.0 2.0 3.0 4.0 2.0 4.0 1.0 5.0 0.7 5.0 0.5 6.0 0.2 7.0
UNIT % mA mA mW mW °C °C
K/W
Marking
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
Continental Device India Limited
Data Sheet
Page 1 of 4
SILIICON PLANAR VOLTAGE REGULATOR DIODE
3
3
Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE
2 1
12
BZX84C2V4 to 75V
SOT-23 Formed SMD Package
Forward Voltage at VF <0.9V at 10mA and <1.5V at 200mA
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
Device
Working
Differential Temperature
Differential
Voltage
Resistance
Coefficient
Resistance
***VZ ( + 5%) (V)
at IZ test=5mA min max
rdiff (Ω)
SZ (mV/K)
at IZ test=5mA at IZ test=5mA
max
min max
rdiff (Ω)
at IZ test=1mA max
BZX84C11
10.40 11.60
20
5.4 9.0
150
BZX84C12
11.40 12.70
25
6.0 10
150
BZX84C13
12.40 14.10
30
7.0 11
170
BZX84C15
13.80 15.60
30
9.2 13
200
BZX84C16
15.30 17.10
40
10.4 14
200
BZX84C18
16.80 19.10
45
12.4 16
225
BZX84C20
18.80 21.20
55
14.4 18
225
BZX84C22
20.80 23.30
55
16.4 20
250
BZX84C24
22.80 25.60
70
18.4 22
250
IR
µA
Max 0.1 0.1 0.1 0.05 0.05 0..