Gre Pro
STU/D20N15
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver...
Gre Pro
STU/D20N15
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Typ
150V
20A
58 @ VGS=10V 65 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
TC=25°C TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit 150 ±20 20 16.8 59 0.211 50 35 -55 to 175
3 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Mar,16,2012
www.samhop.com.tw
STU/D20N15
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=120V , VGS=0V VGS= ±20V , VDS=0V
150
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output...