STU03N20
Sa mHop Microelectronics C orp.
STD03N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field E...
STU03N20
Sa mHop Microelectronics C orp.
STD03N20Green
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
200V
3.28 @ VGS=10V 2A
3.59 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit 200 ±20
2 1.6 5.8 4 42 27 -55 to 150
3 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Jun,03,2014
www.samhop.com.tw
STU03N20 STD03N20
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=160V , VGS=0V VGS= ±20V , VDS=0V
200
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacita...