MPSA28

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package EBC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 - 55 to +150 MPSA29 100 100 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 200 83.3 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCES IC=100µA, VBE=0 MPSA28 MPSA29 Collector Base Voltage VCBO IC=100µA, IE=0 MPSA28 MPSA29 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0, VCB=80V, IE=0, MPSA28 MPSA29 Collector Cut Off Current ICES VCE=60V, VBE=0, MPSA28 VCE=80V, VBE=0, MPSA29 Emitter Cut Off Current IEBO VEB=10V, IC = 0 DC Current Gain *hFE VCE=5V, IC=10mA VCE=5V, IC=100mA Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA Base Emitter On Voltage *VBE (on) VCE=5V, IC=100mA Current Gain Bandwidth Product **fT IC=10mA, VCE=5V, f=100MHz Output Capacitance Cob VCB=10V, IE=0V, f=1.0 MHz MIN 80 100 80 100 12 10,000 ...