MPSA26

MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=40V ICBO VCB=50V ICES VCE=40V ICES VCE=50V IEBO VEB=10V BVCBO IC=100μA BVCES IC=100μA VCE(SAT) IC=100mA, IB=100μA VBE(ON) VCE=5.0V, IC=100mA hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=100mA fT VCE=5.0V, IC=10mA, f=100MHz SYMBOL VCBO VCES VEBO IC PD TJ, Tstg ΘJA MPSA26 50 MPSA27 60 50 60 10 500 625 -65 to +150 200 MPSA26 MIN MAX - 100 -- 500 -- 100 50 50 - 1.5 - 2.0 10,000 10,000 125 - MPSA27 MIN MAX -- 100 -- 500 - 100 60 60 - 1.5 - 2.0 10,000 10,000 125 - UNITS V V V mA mW °C °C/W UNITS nA nA nA nA nA V V V V MHz R0 (18-March 2014) MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R0 (18-March 2014) MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS w w w. c e n t r a l s e m i . c...