DatasheetsPDF.com

1N5929B Dataheets PDF



Part Number 1N5929B
Manufacturers Pan Jit International Inc.
Logo Pan Jit International Inc.
Description GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
Datasheet 1N5929B Datasheet1N5929B Datasheet (PDF)

1N5926B THRU 1N5956B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts FEATURES l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: JEDEC DO-41 Molded plastic over passivated junction Terminals: Solder plated, solde.

  1N5929B   1N5929B



Document
1N5926B THRU 1N5956B GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 1.5 Watts FEATURES l Low profile package l Built-in strain relief l l l l l Glass passivated junction Low inductance Typical IR less than 1 £g A above 11V High temperature soldering : 260 ¢J /10 seconds at terminals Plastic package has Underwriters Laboratory Flammability Classification 94V-O MECHANICAL DATA Case: JEDEC DO-41 Molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Color band denotes positive end (cathode) Standard Packaging: 52mm tape Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ¢J ambient temperature unless otherwise specified. SYMBOL PD DC Power Dissipation @ TL=75 ¢J , Measure at Zero Lead Length(Note 1, Fig. 1) Derate above 75 ¢J Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated IFSM load(JEDEC Method) (Note 1,2) Operating Junction and Storage Temperature Range TJ,TSTG NOTES: 2 1. Mounted on 5.0mm (.013mm thick) land areas. 2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient temperature at 25 ¢J . 4.ZENER IMPEDANCE (Zz) DERIVATION ZZT are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for IZ(ac) = 0.1 IZ, (dc) with the ac freqency = 60Hz. DO-41 VALUE 1.5 15 10 -55 to +150 UNITS Watts mW/¢J Amps ¢J 1N5926B THRU 1N5956B ELECTRICAL CHARACTERISTICS (T L=30 ¢J unless otherwise noted) (V F=1.5Volts Max @ IF=200mA) Device Nominal Zener Test current Voltage Vz @ IZT IZT volts mA (Note 1.) 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 34.1 31.2 28.8 25 23.4 20.8 18.7 17 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8 7.3 6.7 6 5.5 5 4.6 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.1 1.9 Maximum Zener Impedance (Note 2.) ZZT @ IZT Ohms Z Zk @ IZK Ohms @ IZK mA Max reverse Leakage Current IR £g A @ VR Volts Maximum DC Zener Current IZM mAdc 136 125 115 100 93 83 75 68 62 55 50 45 41 38 34 31 29 26 24 22 20 18 16 15 13 12 11 10 9 8 7 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1N5935B 1N5936B 1N5937B 1N5938B 1N5939B 1N5940B 1N5941B 1N5942B 1N5943B 1N5944B 1N5945B 1N5946B 1N5947B 1N5948B 1N5949B 1N5950B 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 1N5956B 5.5 6.5 7 9 10 12 14 17.5 19 23 26 33 38 45 53 67 70 86 100 120 140 160 200 250 300 380 450 600 700 900 1200 550 550 550 600 600 650 650 650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000 3100 4000 4500 5000 6000 6500 7000 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1.


1N5929B 1N5929B 1N5930A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)